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AOTF280A60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 14A TO220F
3169 Pcs New Original In Stock
N-Channel 600 V 14A (Tj) 30W (Tc) Through Hole TO-220F
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5.0 / 5.0
- (449 Ratings)
AOTF280A60L
Product Overview
12937987
DiGi Electronics Part Number
AOTF280A60L-DGManufacturer
Alpha & Omega Semiconductor Inc.
AOTF280A60L
Description
MOSFET N-CH 600V 14A TO220FInventory
3169 Pcs New Original In Stock
N-Channel 600 V 14A (Tj) 30W (Tc) Through Hole TO-220F
Quantity
Minimum 1
Minimum 1
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AOTF280A60L Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tube
Series
aMOS5™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
14A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
Base Product Number
AOTF280
Datasheet & Documents
HTML Datasheet
AOTF280A60L-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
Q13901817
785-AOTF280A60L
5202-AOTF280A60L
Standard Package
50
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
価格優位性を感じており、長期的にお付き合いしたいと思います。
Dec 02, 2025
The packaging was incredibly secure, ensuring that my order arrived in perfect condition without any damage.
Dec 02, 2025
I was impressed by the fast shipping; my order arrived much sooner than expected, which was a pleasant surprise.
Dec 02, 2025
Shipment was quick, and the quality of the items is outstanding.
Dec 02, 2025
Order processing was fast, and the delivery arrived right on schedule.
Dec 02, 2025
Their support team offers multiple channels for assistance, making help readily accessible.
Dec 02, 2025
The rapid delivery times have made planning my projects much easier and less stressful.
Dec 02, 2025
The staff at Di Digi Electronics are always courteous and ready to assist, making shopping a pleasure.
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Frequently Asked Questions (FAQ)
Can the AOTF280A60L MOSFET be safely used as a drop-in replacement for the FDPF14N60 in a 500W offline flyback converter, and what design risks should I evaluate?
While the AOTF280A60L and FDPF14N60 are both 600V N-channel MOSFETs in TO-220F packages with similar continuous drain current ratings (~14A), direct drop-in replacement requires careful evaluation. The AOTF280A60L has a lower gate charge (23.5 nC vs. ~35 nC for FDPF14N60) and lower Rds(on) (280mΩ vs. 450mΩ), which improves efficiency but may alter switching dynamics. However, its lower Ciss (1350 pF vs. ~1800 pF) can lead to faster dv/dt, increasing risk of parasitic turn-on or EMI issues in high-noise flyback topologies. Verify gate drive strength, ensure adequate dead time, and test for voltage overshoot during turn-off. Also confirm thermal performance under actual load, as lower conduction losses may mask unexpected switching losses at high frequencies.
What are the key reliability concerns when operating the AOTF280A60L near its 600V Vdss limit in a hard-switched industrial motor drive application?
Operating the AOTF280A60L close to its 600V breakdown voltage in hard-switched motor drives exposes it to voltage spikes from inductive kickback and parasitic ringing. Even brief excursions beyond 600V—common in poorly snubbed circuits—can cause cumulative degradation or catastrophic failure. The aMOS5™ technology improves ruggedness, but without proper clamping (e.g., RCD snubber or TVS), repetitive avalanche events may stress the device beyond safe operating area (SOA). Design tip: derate Vdss by at least 20% (i.e., keep peak Vds < 480V) and validate transient suppression under worst-case load dump or stall conditions. Also ensure PCB layout minimizes loop inductance to reduce overshoot.
How does the gate drive requirement of the AOTF280A60L compare to the Infineon IPA60R360P7S in a 100kHz half-bridge topology, and what integration challenges might arise?
The AOTF280A60L requires a 10V gate drive for full enhancement (Rds(on) = 280mΩ @ 10V), while the IPA60R360P7S achieves lower Rds(on) at 10V but has higher Qg (~32 nC). At 100kHz, the AOTF280A60L’s lower gate charge reduces drive power and allows use of smaller, lower-current gate drivers (e.g., UCC27511 instead of higher-current alternatives). However, its lower Ciss increases sensitivity to Miller capacitance effects, raising the risk of shoot-through in half-bridge configurations if dead time is insufficient. Always use a gate resistor (4–10Ω) to dampen oscillations and ensure the driver can sink enough current during turn-off to counteract Cgd coupling. Verify cross-conduction margins with an oscilloscope under dynamic load.
Is the AOTF280A60L suitable for high-temperature automotive applications where ambient temperatures exceed 125°C, given its -55°C to 150°C TJ rating?
Although the AOTF280A60L is rated for TJ up to 150°C, sustained operation in >125°C ambient environments—common under-hood—requires rigorous thermal derating. The TO-220F package has limited thermal performance without a heatsink; at 125°C ambient, even modest power dissipation (e.g., 5W) can push TJ dangerously close to 150°C, accelerating electromigration and reducing lifetime. Use a properly sized heatsink and thermal interface material, and derate Id significantly (e.g., <8A continuous at 125°C Ta). Also consider that Rds(on) increases by ~50% at 150°C vs. 25°C, raising conduction losses in a feedback loop. For mission-critical automotive designs, evaluate alternatives with better thermal packages (e.g., D2PAK) or higher SOA robustness.
What layout and grounding practices are critical when paralleling two AOTF280A60L MOSFETs in a high-current DC-DC converter to avoid current imbalance and oscillation?
Paralleling AOTF280A60L devices demands meticulous layout to prevent dynamic current imbalance due to mismatched gate delays and parasitic inductances. Use a star-ground configuration for source connections and place gate resistors (identical values, 4–10Ω) as close as possible to each gate to ensure synchronized switching. Route gate and source traces symmetrically with minimal loop area to reduce mutual inductance. Avoid sharing a single via for source connections—use individual vias per device. Additionally, the low Ciss of the AOTF280A60L makes it prone to high-frequency oscillation when gate impedance is mismatched; include small ferrite beads or RC snubbers if needed. Always validate current sharing with thermal imaging or shunt resistors under full load, as even 10% imbalance can cause one device to overheat and fail prematurely.
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AOTF280A60L CAD Models
Alpha & Omega Semiconductor Inc. AOTF280A60L PCB symbols & footprints
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