93AA86CT-I/SN >
93AA86CT-I/SN
Microchip Technology
IC EEPROM 16KBIT MICROWIRE 8SOIC
1599 Pcs New Original In Stock
EEPROM Memory IC 16Kbit Microwire 3 MHz 8-SOIC
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93AA86CT-I/SN Microchip Technology
5.0 / 5.0 - (186 Ratings)

93AA86CT-I/SN

Product Overview

1405147

DiGi Electronics Part Number

93AA86CT-I/SN-DG
93AA86CT-I/SN

Description

IC EEPROM 16KBIT MICROWIRE 8SOIC

Inventory

1599 Pcs New Original In Stock
EEPROM Memory IC 16Kbit Microwire 3 MHz 8-SOIC
Memory
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.4402 0.4402
  • 10 0.3486 3.4860
  • 30 0.3095 9.2850
  • 100 0.2615 26.1500
  • 500 0.2398 119.9000
  • 1000 0.2267 226.7000
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93AA86CT-I/SN Technical Specifications

Category Memory, Memory

Manufacturer Microchip Technology

Packaging Tape & Reel (TR)

Series -

Product Status Active

DiGi-Electronics Programmable Not Verified

Memory Type Non-Volatile

Memory Format EEPROM

Technology EEPROM

Memory Size 16Kbit

Memory Organization 2K x 8, 1K x 16

Memory Interface Microwire

Clock Frequency 3 MHz

Write Cycle Time - Word, Page 5ms

Voltage - Supply 1.8V ~ 5.5V

Operating Temperature -40°C ~ 85°C (TA)

Mounting Type Surface Mount

Package / Case 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package 8-SOIC

Base Product Number 93AA86

Datasheet & Documents

HTML Datasheet

93AA86CT-I/SN-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051

Additional Information

Other Names
93AA86CT-I/SN-NDR
150-93AA86CT-I/SNCT
150-93AA86CT-I/SNTR
150-93AA86CT-I/SNDKR
93AA86CT-I/SN-DG
Standard Package
3,300

Alternative Parts

View Details
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
M93C86-RMN3TP/K
STMicroelectronics
12996
M93C86-RMN3TP/K-DG
0.0040
MFR Recommended
AT93C86A-10SU-1.8
Microchip Technology
3721
AT93C86A-10SU-1.8-DG
0.0040
MFR Recommended
93AA86T/SN
Microchip Technology
934
93AA86T/SN-DG
0.2267
MFR Recommended
M93C86-WMN6TP
STMicroelectronics
45246
M93C86-WMN6TP-DG
0.2267
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Reviews

5.0/5.0-(Show up to 5 Ratings)
夢***者
Dec 02, 2025
5.0
DiGi Electronics的物流速度非常快,幾乎是隔天就能收到商品,滿足我的緊急需求。
リ***の朝
Dec 02, 2025
5.0
ちゃらんぽらんな配送ではなく、徹底した梱包と追跡追求に感心します。
Peac***lGaze
Dec 02, 2025
5.0
The professionalism of their staff makes working with them very smooth.
Lu***ife
Dec 02, 2025
5.0
The after-sales team demonstrates genuine professionalism.
Azur***eams
Dec 02, 2025
5.0
DiGi Electronics ships fast and supports customers promptly, which I highly appreciate.
Hopef***orizon
Dec 02, 2025
5.0
Their quick turnaround on support inquiries leaves a positive impression.
Spa***torm
Dec 02, 2025
5.0
Their support team’s meticulous approach ensures that any problem is fully resolved, preventing recurrence.
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Frequently Asked Questions (FAQ)

Can I drop-in replace a 93AA86CT-I/SN with a 93AA86C-I/SN in a 1.8 V Microwire bus if my firmware issues sequential read commands across 2K x 8 boundaries, and what hidden timing risk should I verify?

No, the 93AA86CT-I/SN is a “T” process variant with tighter 5 ms max page-write settling and slightly different Sequential Read wrap-around logic inside the 2K x 8 array. At 1.8 V the 93AA86C-I/SN can stretch tCLKH/tCLKL by up to 150 ns, causing the host MCU to miss the dummy bit that starts the next 16-byte page and returning garbage 0xFFs. Mitigation: after any Write or Write-Enable command, poll DO until it goes high (ready), wait an extra 5 ms at 85 °C, and re-issue the READ opcode with a fresh 16-bit address. If cycle time is critical, stay with the 93AA86CT-I/SN or switch to AT93C86A-10SU-1.8 which keeps the same sequential-read timing down to 1.7 V.

I’m migrating from SPI NOR 25LC256 to 93AA86CT-I/SN to save pins—how do I estimate the real-world throughput hit when storing 256-byte sensor logs every 100 ms over Microwire at 3 MHz?

Microwire on 93AA86CT-I/SN is half-duplex with 1 bit per clock and mandatory 16-bit command overhead, while 25LC256 SPI is full-duplex and can page-program 64 bytes in 5 ms. For 256 bytes you need 16 consecutive 16-byte page writes: 16 × (16 × 1 µs + 5 ms) = 80.2 ms, eating 80 % of your 100 ms window. Reduce the log length to 128 bytes or buffer two records in MCU RAM and background-write every 200 ms. Add a 10 kΩ pull-up on CS to avoid false deselect when the sensor task is pre-empted by a higher-priority ISR.

What is the worst-case EEPROM wear-out of 93AA86CT-I/SN if my BLE module writes a 4-byte status structure every connection interval (7.5 ms) at 25 °C, and which competitor part gives 10× endurance without filesystem redesign?

At 1 M writes/year the 93AA86CT-I/SN 1K endurance spec is exhausted in 10 months. The part lacks internal wear-leveling, so rotating the 4-byte field across the 2K array extends life to only 5.5 years. Upgrade to Microchip 25AA02E48 (2 Kbit, SPI, 1 M cycles) or use an FRAM MB85RC16V (5 V, 10¹² cycles) with the same 8-SOIC footprint but add a 0.1 µF cap near VCC because FRAM draws 8 mA peak on write—three times the 93AA86CT-I/SN.

My 93AA86CT-I/SN shares the Microwire bus with a 5 V-powered MCP41HV51 digital potentiometer—will the 1.8 V minimum EEPROM tolerate level-translated 5 V signals, and what inexpensive discrete circuit prevents data corruption?

No, 93AA86CT-I/SN inputs are not 5 V-tolerant; exceeding VCC+0.5 V triggers the ESD clamp and can corrupt the ongoing write cycle. Use a 74LVC2T45 dual-supply translator: set its VCCA=1.8 V from the same LDO as the EEPROM and VCCB=5 V. Add a 330 Ω series resistor on every Microwire line (CS, SK, DI, DO) to limit fault current if the translator powers down first. During layout keep the trace length between translator and 93AA86CT-I/SN <20 mm to hold SK rise time under 10 ns at 3 MHz and avoid double-clocking.

When soldering 93AA86CT-I/SN with MSL-1 rating on a 12-layer HDI board using lead-free SAC305 paste, can I skip the 24-hour bake recommended for 0.125 mm thick packages, and what post-assembly EEPROM test catches latent interface defects?

MSL-1 allows skipping the pre-bake, but on >8-layer boards moisture trapped in micro-vias can still create the “pop-corning” signature that opens bond wires inside 93AA86CT-I/SN. Do a 125 °C 2 h dry-bake if the parts sat >24 h outside moisture barrier. After reflow, run a Microwire “Write & Verify” of the first and last 16-byte page at 1.8 V (worst-case) and read-back at 5.5 V; any marginal CLK or DO pad will show bit-errors at temperature extremes. Log the fail bit position—if it clusters on DO7, suspect cold-solder on pin 6 (DO) rather than the die itself.

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