APT75GP120JDQ3 >
APT75GP120JDQ3
Microchip Technology
IGBT MOD 1200V 128A 543W ISOTOP
34188 Pcs New Original In Stock
IGBT Module PT Single 1200 V 128 A 543 W Chassis Mount ISOTOP®
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APT75GP120JDQ3 Microchip Technology
5.0 / 5.0 - (480 Ratings)

APT75GP120JDQ3

Product Overview

13252623

DiGi Electronics Part Number

APT75GP120JDQ3-DG
APT75GP120JDQ3

Description

IGBT MOD 1200V 128A 543W ISOTOP

Inventory

34188 Pcs New Original In Stock
IGBT Module PT Single 1200 V 128 A 543 W Chassis Mount ISOTOP®
Quantity
Minimum 1

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In Stock (All prices are in USD)
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APT75GP120JDQ3 Technical Specifications

Category Transistors, IGBTs, IGBT Modules

Manufacturer Microchip Technology

Packaging Tube

Series POWER MOS 7®

Product Status Active

IGBT Type PT

Configuration Single

Voltage - Collector Emitter Breakdown (Max) 1200 V

Current - Collector (Ic) (Max) 128 A

Power - Max 543 W

Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A

Current - Collector Cutoff (Max) 1.25 mA

Input Capacitance (Cies) @ Vce 7.04 nF @ 25 V

Input Standard

NTC Thermistor No

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Chassis Mount

Package / Case ISOTOP

Supplier Device Package ISOTOP®

Base Product Number APT75GP120

Datasheet & Documents

HTML Datasheet

APT75GP120JDQ3-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
APT75GP120JDQ3MI
APT75GP120JDQ3MI-ND
Standard Package
1

Reviews

5.0/5.0-(Show up to 5 Ratings)
Fragil***olement
Dec 02, 2025
5.0
Le suivi logistique est transparent, je suis toujours informé en temps réel.
Fle***eLys
Dec 02, 2025
5.0
Les produits ont dépassé mes attentes en terme de qualité, et leur équipe support est toujours disponible.
きら***かる
Dec 02, 2025
5.0
物流のスピードに驚きました。注文してから数日で商品が届き、その丁寧な梱包にも感心しました。
Sing***Birds
Dec 02, 2025
5.0
Having a partner like DiGi Electronics, with abundant stock and responsive support, is a great asset.
Lus***adow
Dec 02, 2025
5.0
The service experience with DiGi Electronics is consistently positive and reassuring.
Opal***rney
Dec 02, 2025
5.0
Their inventory system adapts well to our bulk ordering requirements.
Gent***iant
Dec 02, 2025
5.0
Their packaging materials are high quality, ensuring product safety.
Lumi***sPath
Dec 02, 2025
5.0
My order was shipped out immediately after purchase, showcasing efficient logistics.
Lumi***sLane
Dec 02, 2025
5.0
Every interaction with DiGi Electronics reassures me of their commitment to quality and customer satisfaction.
Shin***Stars
Dec 02, 2025
5.0
Fast shipping combined with proactive support makes every experience delightful.
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Frequently Asked Questions (FAQ)

Can the APT75GP120JDQ3 IGBT module be safely used as a drop-in replacement for an older Infineon FF100R12KS4 in a 3-phase motor drive inverter, and what design risks should I evaluate before making the switch?

While both the APT75GP120JDQ3 and Infineon FF100R12KS4 are 1200V IGBT modules rated around 100–128A, they are not direct electrical or thermal drop-ins due to differences in gate drive requirements, switching behavior, and package parasitics. The APT75GP120JDQ3 uses Microchip’s POWER MOS 7® technology with lower input capacitance (7.04 nF vs. ~9.5 nF for the FF100R12KS4), which may allow faster switching but increases susceptibility to Miller-induced turn-on if gate drive layout isn’t optimized. Additionally, the ISOTOP® package has different mounting hole patterns and thermal interface characteristics compared to the EconoPACK™ used in the FF100R12KS4. Before replacement, verify gate resistor values, dead-time margins, and short-circuit ruggedness under your specific DC-link voltage and load conditions. Always revalidate thermal performance using empirical testing or detailed thermal modeling, as even small differences in Vce(on) and switching losses can significantly impact junction temperature at high duty cycles.

What are the key thermal management considerations when designing a heatsink interface for the APT75GP120JDQ3 in a high-vibration industrial environment, and how does the ISOTOP® package influence reliability?

The APT75GP120JDQ3’s ISOTOP® package is designed for direct chassis mounting with excellent thermal conductivity, but its reliability in high-vibration settings depends heavily on proper mounting torque, flatness of the baseplate and heatsink, and use of compliant thermal interface materials (TIMs). Unlike soldered or press-fit packages, ISOTOP® relies on mechanical clamping force to maintain low thermal resistance—typically requiring 6–8 Nm torque per screw with spring washers to prevent loosening. Uneven pressure or warped surfaces can create hotspots, especially since the module dissipates up to 543W under peak loads. Use a high-quality phase-change TIM or graphite pad rated for >5 W/mK, and ensure the heatsink surface finish is ≤10 µm flatness. Also, avoid rigid mechanical connections to external busbars; instead, use flexible copper straps to decouple vibration stress from the module terminals, preventing fatigue cracking over time.

How does the absence of an integrated NTC thermistor in the APT75GP120JDQ3 affect system-level thermal protection design, and what are the best practices for implementing accurate overtemperature shutdown?

The APT75GP120JDQ3 does not include an onboard NTC thermistor, which means you must externally monitor temperature to protect against thermal runaway—a critical gap in safety-critical applications like solar inverters or UPS systems. Relying solely on heatsink-mounted sensors introduces lag and underestimates true junction temperature, especially during transient overloads. Best practice is to mount a discrete NTC or RTD as close as possible to the module’s baseplate, ideally within 10 mm and thermally coupled with epoxy or a dedicated sensor well. Calibrate your shutdown threshold using the known Rth(j-c) of the APT75GP120JDQ3 (typically ~0.24 K/W) to estimate Tj from case temperature. For higher accuracy, implement dynamic thermal modeling in firmware that accounts for recent load history. Always include a hardware-based fast trip (e.g., via comparator circuit) in addition to software monitoring to meet functional safety requirements such as IEC 61508.

Is the APT75GP120JDQ3 suitable for hard-switched applications like resonant converters or ZVS topologies, and what gate drive precautions are necessary to avoid dynamic avalanche failure?

The APT75GP120JDQ3 is primarily optimized for hard-switching applications such as motor drives and UPS inverters, but it can be used in certain soft-switched topologies if careful attention is paid to voltage overshoot and dv/dt control. In resonant or ZVS circuits, parasitic inductance in the DC-link and module layout can cause voltage spikes exceeding the 1200V rating during turn-off, especially at high currents. Although the device has some degree of avalanche capability, repeated dynamic avalanche events—common in poorly damped resonant tanks—can lead to premature degradation. To mitigate this, use a low-inductance busbar design, place snubber capacitors within 2 cm of the module terminals, and ensure the gate driver provides active Miller clamping. Additionally, set the gate resistance high enough to limit di/dt during turn-off, but not so high that it increases switching losses excessively. Always validate operation with double-pulse testing under worst-case resonant conditions.

When paralleling multiple APT75GP120JDQ3 modules for higher current capacity, what layout and drive synchronization techniques are essential to ensure current sharing remains within ±10% under dynamic load steps?

Paralleling APT75GP120JDQ3 modules demands meticulous attention to electrical symmetry, thermal coupling, and gate drive timing to avoid destructive current imbalance. Even minor differences in gate loop inductance or threshold voltage can cause one module to switch faster, leading to uneven dynamic current sharing—especially during turn-on transients. Use a common, low-inductance DC bus with symmetric current paths, and mount all modules on the same heatsink with uniform clamping force to minimize thermal gradients. Employ a single gate driver with individual gate resistors for each module (typically 2–5 Ω) to dampen oscillations and allow fine-tuning. Ensure gate drive signals are length-matched and routed away from power loops to prevent crosstalk. For best results, select modules from the same production batch and verify static Vce(on) matching within 5%. Finally, implement real-time current sensing (e.g., with shunt resistors or Rogowski coils) and feedback-controlled gate delay adjustment if operating above 50 kHz or in mission-critical systems.

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