Counterfeit and defect prevention
Visual and packaging inspection
Electrical performance verification
Service Email:
[email protected]
>
NVMFS6H864NLT1G
onsemi
MOSFET N-CH 80V 7A/22A 5DFN
2569 Pcs New Original In Stock
N-Channel 80 V 7A (Ta), 22A (Tc) 3.5W (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Request Quote
(Ships tomorrow)
*Quantity
Minimum 1
Minimum 1
5.0 / 5.0
- (460 Ratings)
NVMFS6H864NLT1G
Product Overview
12968583
DiGi Electronics Part Number
NVMFS6H864NLT1G-DGManufacturer
onsemi
NVMFS6H864NLT1G
Description
MOSFET N-CH 80V 7A/22A 5DFNInventory
2569 Pcs New Original In Stock
N-Channel 80 V 7A (Ta), 22A (Tc) 3.5W (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
How to Order
Shipping & Delivery
Quality Assurance
365 - Day Quality Guarantee - Every part fully backed.
90 - Day Refund or Exchange - Defective parts? No hassle.
Limited Stock, Order Now - Get reliable parts without worry.
Global Shipping & Secure Packaging
Worldwide Delivery in 3-5 Business Days
100% ESD Anti-Static Packaging
Real-Time Tracking for Every Order
Secure & Flexible Payment
Credit Card, VISA, MasterCard, PayPal, Western Union, Telegraphic Transfer(T/T) and more
All payments encrypted for security
NVMFS6H864NLT1G Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
7A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
29mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
431 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 33W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case
8-PowerTDFN, 5 Leads
Base Product Number
NVMFS6
Datasheet & Documents
HTML Datasheet
NVMFS6H864NLT1G-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
488-NVMFS6H864NLT1GDKR
488-NVMFS6H864NLT1GTR
488-NVMFS6H864NLT1GCT
Standard Package
1,500
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
고객 센터가 정말 친절했고, 배송도 빠르게 왔어요.
Dec 02, 2025
Ich fühle mich bei DiGi Electronics als Kunde geschätzt und gut betreut.
Dec 02, 2025
Reliable delivery times and excellent product quality are reasons I keep returning.
Dec 02, 2025
Their after-sales response is consistently fast, often providing solutions within the same day.
Dec 02, 2025
From inquiry to service, their professionalism creates a seamless experience.
Dec 02, 2025
Customer support at DiGi is always available, knowledgeable, and eager to assist.
Dec 02, 2025
The team’s friendliness made me feel confident in my purchase, and the logistics delivered on time.
Dec 02, 2025
Navigating their website is straightforward, saving me time and frustration during shopping.
Publish Evalution
Evalution Message
Please enter your review message.
Please post honest comments and do not post ilegal comments.
Frequently Asked Questions (FAQ)
Can I use the NVMFS6H864NLT1G as a drop-in replacement for the NTMFS6H864NLT1G in an existing automotive power management design, and what are the key layout or thermal considerations I should verify before doing so?
Yes, the NVMFS6H864NLT1G can generally serve as a drop-in replacement for the NTMFS6H864NLT1G due to nearly identical electrical characteristics, package footprint (5-DFN 5x6), and AEC-Q101 qualification. However, you must verify that your PCB thermal pad design matches the exposed metal tab configuration and that your solder reflow profile accommodates both parts’ MSL 1 rating. Pay special attention to gate drive compatibility—both require 10V for full enhancement—and ensure your layout minimizes loop inductance, especially in high-di/dt switching applications. A thermal simulation under worst-case ambient conditions is recommended to confirm junction temperature stays within limits given the 33W (Tc) dissipation spec assumes ideal heatsinking.
What are the real-world reliability risks when operating the NVMFS6H864NLT1G near its 22A continuous drain current limit in a compact EV auxiliary converter, and how can I mitigate them?
Operating the NVMFS6H864NLT1G at or near its 22A rating (specified at case temperature Tc = 25°C) without proper thermal management significantly increases risk of thermal runaway and premature failure. In practice, this current level is only achievable with aggressive heatsinking—typically a large copper pour or direct attachment to a cold plate. At elevated ambient temperatures (common in EV under-hood environments), derating is essential; aim to keep Tj below 150°C even under transient overloads. Use thermal vias under the package, monitor case temperature via embedded sensors, and consider parallel devices if sustained high-current operation is required. Also, ensure your gate driver can maintain Vgs ≥ 10V under all conditions to minimize Rds(on) and conduction losses.
How does the NVMFS6H864NLT1G compare to the RS6N120BHTB1 from Rohm in terms of switching performance and EMI behavior for a 48V mild-hybrid inverter application?
The NVMFS6H864NLT1G offers lower gate charge (9nC max @ 10V vs. ~14nC for RS6N120BHTB1), enabling faster switching and reduced gate drive losses—advantageous in high-frequency 48V systems. However, its lower input capacitance (431pF vs. ~600pF) means higher dv/dt during turn-off, which can exacerbate EMI if not properly managed with snubbers or gate resistors. The onsemi part also has slightly lower Rds(on) (29mΩ vs. ~35mΩ), improving efficiency under light loads. For EMI-sensitive automotive applications, you may need to add a small gate resistor (2–10Ω) to control slew rate when using the NVMFS6H864NLT1G, whereas the RS6N120BHTB1’s inherently slower switching might reduce filtering complexity but increase conduction losses.
Is the NVMFS6H864NLT1G suitable for hot-swap or inrush current control circuits in automotive battery systems, and what design precautions are necessary to avoid failure during repeated plug-in events?
The NVMFS6H864NLT1G can be used in hot-swap applications, but its 80V Vdss rating leaves minimal margin in 48V systems where load-dump transients can exceed 70V. To ensure reliability, implement active voltage clamping (e.g., TVS diodes) and use a dedicated hot-swap controller to manage inrush via soft-start gate control. Repeated plug-in events cause thermal cycling; mitigate this by oversizing the copper area under the package and avoiding operation near the 22A limit during startup. Also, verify that your gate drive circuit maintains sufficient Vgs during brownout conditions—insufficient drive increases Rds(on), leading to localized heating and potential SOA violation during capacitive charging.
What are the critical layout mistakes to avoid when designing a high-current PCB with the NVMFS6H864NLT1G in a 5-DFN package, especially regarding thermal performance and parasitic inductance?
Common layout errors include insufficient thermal vias under the exposed pad, long source traces increasing parasitic inductance, and asymmetric gate routing causing uneven switching. For optimal thermal performance, use at least nine 0.3mm thermal vias connected to an internal ground/power plane acting as a heat spreader. Keep the drain and source loops as short and wide as possible—preferably using adjacent layers with coplanar stitching vias—to minimize inductance that can cause voltage overshoot and ringing. Route the gate signal away from high-dv/dt nodes and use a low-impedance driver close to the device. Avoid placing sensitive analog traces beneath the MOSFET, as switching noise can couple through the substrate. Following these practices ensures the NVMFS6H864NLT1G operates within its safe operating area and leverages its full 33W (Tc) power capability.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
NVMFS6H864NLT1G CAD Models
onsemi NVMFS6H864NLT1G PCB symbols & footprints
productDetail
