SCTW40N120G2V >
SCTW40N120G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 120
2240 Pcs New Original In Stock
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
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SCTW40N120G2V
5.0 / 5.0 - (108 Ratings)

SCTW40N120G2V

Product Overview

12950523

DiGi Electronics Part Number

SCTW40N120G2V-DG
SCTW40N120G2V

Description

SILICON CARBIDE POWER MOSFET 120

Inventory

2240 Pcs New Original In Stock
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 13.2092 13.2092
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SCTW40N120G2V Technical Specifications

Category Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer STMicroelectronics

Packaging Tube

Series -

Product Status Active

FET Type N-Channel

Technology SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss) 1200 V

Current - Continuous Drain (Id) @ 25°C 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 18V

Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 18V

Vgs(th) (Max) @ Id 4.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V

Vgs (Max) +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds 1233 pF @ 800 V

FET Feature -

Power Dissipation (Max) 278W (Tc)

Operating Temperature -55°C ~ 200°C (TJ)

Mounting Type Through Hole

Supplier Device Package HiP247™

Package / Case TO-247-3

Datasheet & Documents

HTML Datasheet

SCTW40N120G2V-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
497-SCTW40N120G2V
Standard Package
30

Alternative Parts

View Details
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
MSC080SMA120B
Microchip Technology
2100
MSC080SMA120B-DG
18.8043
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