SMBJ120A-E3/52 >
SMBJ120A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 120VWM 193VC DO214AA
5123 Pcs New Original In Stock
193V Clamp 3.1A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
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SMBJ120A-E3/52 Vishay General Semiconductor - Diodes Division
5.0 / 5.0 - (212 Ratings)

SMBJ120A-E3/52

Product Overview

1003398

DiGi Electronics Part Number

SMBJ120A-E3/52-DG
SMBJ120A-E3/52

Description

TVS DIODE 120VWM 193VC DO214AA

Inventory

5123 Pcs New Original In Stock
193V Clamp 3.1A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
CAD Models - PCB Symbols & Footprints
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.1204 0.1204
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SMBJ120A-E3/52 Technical Specifications

Category Transient Voltage Suppressors (TVS), TVS Diodes

Packaging Cut Tape (CT) & Digi-Reel®

Series TransZorb®

Product Status Active

Type Zener

Unidirectional Channels 1

Voltage - Reverse Standoff (Typ) 120V

Voltage - Breakdown (Min) 133V

Voltage - Clamping (Max) @ Ipp 193V

Current - Peak Pulse (10/1000µs) 3.1A

Power - Peak Pulse 600W

Power Line Protection No

Applications General Purpose

Capacitance @ Frequency -

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Package / Case DO-214AA, SMB

Supplier Device Package DO-214AA (SMBJ)

Base Product Number SMBJ120

Datasheet & Documents

HTML Datasheet

SMBJ120A-E3/52-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080

Additional Information

Other Names
SMBJ120A-E3/52GITR
SMBJ120A-E3/52GITR-DG
112-SMBJ120A-E3/52CT
SMBJ120A-E3/52-DG
SMBJ120A-E3/52GIDKR
SMBJ120A-E3/52GIDKR-DG
SMBJ120AE352
SMBJ120A-E3/52GICT-DG
112-SMBJ120A-E3/52TR
112-SMBJ120A-E3/52DKR
SMBJ120A-E3/52GICT
Standard Package
750

Alternative Parts

PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
SMBJ120A-M3/52
Vishay General Semiconductor - Diodes Division
799
SMBJ120A-M3/52-DG
0.0012
MFR Recommended
SMBJ120AE3/TR13
Microchip Technology
866
SMBJ120AE3/TR13-DG
0.0012
Direct
SMBJ120A-M3/5B
Vishay General Semiconductor - Diodes Division
715
SMBJ120A-M3/5B-DG
0.0012
Direct
SMBJ120AHE3/52
Vishay General Semiconductor - Diodes Division
818
SMBJ120AHE3/52-DG
0.0012
Direct
SMBJ120
Littelfuse
1033
SMBJ120-DG
0.0012
MFR Recommended

Reviews

5.0/5.0-(Show up to 5 Ratings)
はな***ひかり
Dec 02, 2025
5.0
スタッフの対応が丁寧で、また利用したいと思います。
Mysti***urney
Dec 02, 2025
5.0
The website offers an effortless shopping experience with minimal distractions.
Bold***ture
Dec 02, 2025
5.0
Fast shipping combined with courteous support makes for a flawless experience.
Ecli***Gaze
Dec 02, 2025
5.0
The way they package items is top-notch—very secure and reassuring.
Mea***Muse
Dec 02, 2025
5.0
Impressed with how quickly my order was dispatched and delivered. Efficient service overall.
WildB***evard
Dec 02, 2025
5.0
Timeleness and packaging quality are always top-notch.
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Frequently Asked Questions (FAQ)

When designing in the SMBJ120A-E3/52 for surge protection in an industrial control circuit, what are the key risks if the clamping voltage (193V max) is too close to the system's normal operating voltage?

When using the SMBJ120A-E3/52 in industrial applications, if the circuit's normal operating voltage approaches 120V reverse standoff—especially during transients or ripple events—there's a risk of nuisance tripping or premature conduction due to the 133V breakdown minimum. This can lead to unnecessary power dissipation and potential overheating under sustained overvoltage conditions. To mitigate this risk, ensure normal operating conditions (including ripple and drift) stay below 80% of the 120VWM rating (ideally <96V), and verify with transient simulations that the 193V clamping level won't stress downstream components like microcontrollers or level-shifters operating at 100V or above. Consider higher-voltage alternatives like the SMBJ130A-E3/52 if margin is insufficient.

How does the SMBJ120A-E3/52 compare to the SMAJ120A in terms of peak pulse current handling and PCB footprint when used for transient protection in a space-constrained power supply?

The SMBJ120A-E3/52 offers 600W peak pulse power and 3.1A Ipp in the DO-214AA (SMB) package, while the SMAJ120A (DO-214AC) provides the same voltage ratings but in a smaller footprint. However, the SMAJ120A has a lower 400W rating and 2.1A Ipp, making the SMBJ120A-E3/52 preferable in environments with higher surge exposure (e.g., IEC 61000-4-5 tested systems). When space is limited, confirm whether the SMAJ120A’s reduced size (5.5mm vs. 4.3mm length) is worth the derating risk—if the expected surge exceeds 2.1A, the SMBJ120A-E3/52’s robustness justifies the slightly larger area. Always validate thermal performance on your board layout, as the SMB package of the SMBJ120A-E3/52 benefits from better thermal dissipation.

What reliability concerns should be considered when using the SMBJ120A-E3/52 in high-temperature environments near the 150°C junction limit?

Operating the SMBJ120A-E3/52 close to its 150°C maximum junction temperature increases the risk of long-term parametric drift and accelerated aging, especially if the device frequently activates during surges. Frequent clamping events at elevated ambient temperatures (e.g., in sealed enclosures) can degrade the Zener junction over time, increasing leakage current or shifting clamping voltage. To ensure reliability, derate the junction temperature to ≤125°C under worst-case conditions, use thermal vias in the PCB layout to improve heat dissipation from the SMBJ120A-E3/52’s pad, and estimate cumulative thermal stress using the 600W pulse rating with actual waveform duration. Monitor surface temperature during prototype testing under surge load.

Can the SMBJ120A-E3/52 be used as a direct replacement for the Littelfuse SMAJ120CA in a bidirectional protection circuit, and what design changes are required?

No, the SMBJ120A-E3/52 is a unidirectional TVS diode and cannot directly replace the bidirectional SMAJ120CA without circuit modification. The SMAJ120CA protects both polarities of transient events, commonly used in AC or floating DC lines, whereas the SMBJ120A-E3/52 only suppresses positive transients referenced to ground. Using it as a drop-in replacement in a bidirectional application leaves the negative transient path unprotected, risking damage to sensitive components. To retrofit the SMBJ120A-E3/52, you’d need to either ensure the circuit only sees unidirectional transients or pair it with a second diode for reverse protection. For direct replacement, consider the bidirectional version: SMBJ120CA-E3/52.

What PCB layout practices should be followed when integrating the SMBJ120A-E3/52 to minimize inductive voltage spikes during fast transients?

To maximize the surge protection effectiveness of the SMBJ120A-E3/52, minimize trace inductance between the diode and protected line by using short, wide traces and placing the device as close as possible to the entry point of the transient (e.g., connector or switch). Ground connections should use multiple vias to inner ground planes to reduce impedance. Avoid daisy-chaining the SMBJ120A-E3/52 with other protection components; instead, connect it directly across the line and ground with minimal loop area. Poor layout can introduce inductance that causes voltage overshoot beyond the 193V clamping level—potentially damaging downstream ICs—even when the device is properly rated. Simulate transient response with parasitic estimates to validate effectiveness.

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