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SIHG17N80E-GE3
Vishay Siliconix
MOSFET N-CH 800V 15A TO247AC
2475 Pcs New Original In Stock
N-Channel 800 V 15A (Tc) 208W (Tc) Through Hole TO-247AC
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5.0 / 5.0
- (261 Ratings)
SIHG17N80E-GE3
Product Overview
12786281
DiGi Electronics Part Number
SIHG17N80E-GE3-DGManufacturer
Vishay Siliconix
SIHG17N80E-GE3
Description
MOSFET N-CH 800V 15A TO247ACInventory
2475 Pcs New Original In Stock
N-Channel 800 V 15A (Tc) 208W (Tc) Through Hole TO-247AC
Quantity
Minimum 1
Minimum 1
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SIHG17N80E-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tube
Series
E
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2408 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG17
Datasheet & Documents
HTML Datasheet
SIHG17N80E-GE3-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Standard Package
50
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
Long-term reliability and exceptional quality are what define DiGi Electronics for me.
Dec 02, 2025
The interface is sleek and modern, making shopping enjoyable.
Dec 02, 2025
Overall, an outstanding experience driven by professional support and fast delivery.
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Frequently Asked Questions (FAQ)
What are the key thermal design considerations when using the SIHG17N80E-GE3 in a high-power switching application to avoid overheating?
When using the SIHG17N80E-GE3 in high-power applications, maintaining junction temperature below 150°C requires effective heatsinking due to its 208W (Tc) power dissipation rating. Since the SIHG17N80E-GE3 uses a TO-247AC package, expect thermal resistance from junction-to-case around 0.6°C/W—actual performance depends heavily on PCB layout and external cooling. Use a heatsink with low thermal interface resistance and verify operation under worst-case conditions (high ambient temperature and maximum Id of 15A). Monitor hotspot formation during testing, especially in hard-switched topologies like PFC or inverters, and ensure derating curves are followed for reliable long-term operation of the SIHG17N80E-GE3.
Can the SIHG17N80E-GE3 directly replace IXTH30N60L2 in an existing 600V industrial motor drive design without circuit modifications?
Replacing IXTH30N60L2 with the SIHG17N80E-GE3 introduces both advantages and risks: while the SIHG17N80E-GE3 offers higher 800V Vdss for improved surge margin, it operates on a different voltage class and has higher Rds(on) (290mΩ vs ~160mΩ) and lower Id (15A vs 30A). This may increase conduction losses significantly in a motor drive previously optimized for the IXTH30N60L2. Additionally, gate charge (122nC) is similar, but drive requirements differ due to threshold voltage (4V max for SIHG17N80E-GE3). Replacing without reviewing gate drive stability, thermal design, and overvoltage protection could compromise efficiency and reliability—simulated comparison under load transients is strongly advised before substitution with the SIHG17N80E-GE3.
How does the gate charge of 122 nC at 10V impact switching losses when using SIHG17N80E-GE3 in a 50 kHz hard-switched flyback converter?
With a Qg of 122 nC at 10V, the SIHG17N80E-GE3 requires careful gate driver selection to minimize switching transition times in a 50 kHz flyback converter. High gate charge increases total switching energy—especially turn-on and turn-off delays—leading to measurable losses at 50 kHz. For example, using a weak gate driver (e.g., resistor-limited or low-current output IC) will extend switching transitions, increasing both turn-on and turn-off losses on the SIHG17N80E-GE3. To mitigate this, use a driver capable of sourcing and sinking ≥2A peak current with low gate resistance (5–10 Ω). Also consider driving Vgs at 12–15V (within ±30V limit) to reduce Rds(on) dynamically and offset switching loss with conduction efficiency in the SIHG17N80E-GE3.
What are the main reliability risks when operating SIHG17N80E-GE3 near its 800V Vdss limit in a surge-prone AC-DC power supply?
Operating the SIHG17N80E-GE3 close to its 800V Vdss limit in surge-prone environments—such as industrial AC-DC supplies—risks avalanche breakdown during line transients (e.g., lightning strikes or load dumps). While the device lacks explicit avalanche rating in its datasheet, exceeding Vdss even momentarily can cause hot-spot failure. Always derate by at least 15–20% (i.e., max 640–680V operating voltage) and implement clamping circuits like RC snubbers or transient voltage suppressors. Additionally, layout parasitics (PCB inductance in drain loop) can generate voltage spikes during switching—keep drain traces short and verify waveforms under dynamic conditions to ensure the SIHG17N80E-GE3 avoids overvoltage stress.
Is the SIHG17N80E-GE3 a suitable drop-in replacement for IXTH20N65X in a resonant LLC converter, and what design trade-offs should be evaluated?
The SIHG17N80E-GE3 is not a drop-in replacement for IXTH20N65X in an LLC resonant converter due to differences in voltage rating (800V vs 650V), Rds(on) (290mΩ vs ~400mΩ), and gate charge (122nC vs ~65nC). While the higher 800V rating of the SIHG17N80E-GE3 improves margin in universal input designs, its higher Qg increases gate drive power and may disrupt resonant tuning. The lower Rds(on) of SIHG17N80E-GE3 reduces conduction loss, but its output capacitance (not listed, inferred from Ciss) may affect ZVS conditions. Evaluate resonant current ringing, dead time settings, and EMI performance when substituting. Adjust gate resistors and test under full-load ZVS behavior to ensure reliable soft-switching with the SIHG17N80E-GE3.
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