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SIZ900DT-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 30V 24A 6PWRPAIR
2389 Pcs New Original In Stock
Mosfet Array 30V 24A, 28A 48W, 100W Surface Mount 6-PowerPair™
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5.0 / 5.0
- (190 Ratings)
SIZ900DT-T1-GE3
Product Overview
12786736
DiGi Electronics Part Number
SIZ900DT-T1-GE3-DGManufacturer
Vishay Siliconix
SIZ900DT-T1-GE3
Description
MOSFET 2N-CH 30V 24A 6PWRPAIRInventory
2389 Pcs New Original In Stock
Mosfet Array 30V 24A, 28A 48W, 100W Surface Mount 6-PowerPair™
Quantity
Minimum 1
Minimum 1
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SIZ900DT-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, FET, MOSFET Arrays
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
24A, 28A
Rds On (Max) @ Id, Vgs
7.2mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1830pF @ 15V
Power - Max
48W, 100W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-PowerPair™
Supplier Device Package
6-PowerPair™
Base Product Number
SIZ900
Datasheet & Documents
HTML Datasheet
SIZ900DT-T1-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
SIZ900DT-T1-GE3DKR
SIZ900DTT1GE3
SIZ900DT-T1-GE3CT
SIZ900DT-T1-GE3TR
Standard Package
3,000
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
Très satisfait de la rapidité de livraison et du support client réactif.
Dec 02, 2025
DiGi Electronics’ packaging is designed to prevent damage, showing their dedication to delivering satisfaction.
Dec 02, 2025
I admire DiGi for maintaining excellent quality control, giving me peace of mind with every purchase.
Dec 02, 2025
The customer service at DiGi Electronics is consistently friendly and helpful, making shopping a pleasure.
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Frequently Asked Questions (FAQ)
What are the key design-in risks when using the SIZ900DT-T1-GE3 in a high-temperature motor control application near its 150°C TJ limit?
When designing with the SIZ900DT-T1-GE3 in high-temperature environments like motor control, the primary risk is exceeding the 150°C junction temperature under continuous load due to its 48W typical power dissipation (100W peak). At elevated ambient temperatures, thermal runaway can occur if PCB copper area for heatsinking is insufficient. To mitigate this, use at least 2oz copper with ≥400 mm² per FET and a 4-layer stack-up with thermal vias under the exposed pad. Also monitor actual Rds(on), which increases by ~50% from 25°C to 150°C, potentially exceeding 10mΩ under load and increasing conduction losses beyond initial estimates.
How does the SIZ900DT-T1-GE3 compare to the FDMS7602S in a battery-powered half-bridge design requiring logic-level drive?
The SIZ900DT-T1-GE3 offers lower Rds(on) (7.2mΩ vs. 8.5mΩ) and higher current capability (24A vs. 20A) than the FDMS7602S, making it more efficient in high-current, battery-powered half-bridge applications. However, its higher input capacitance (1830pF vs. 1300pF) increases switching losses, requiring careful gate driver selection (e.g., TC4427) to minimize transition time and avoid shoot-through. Since SIZ900DT-T1-GE3 is obsolete, FDMS7602S is a more sustainable option unless existing designs require drop-in compatibility. Verify layout symmetry in half-bridge configuration to prevent current imbalance between the two integrated FETs.
Can the SIZ900DT-T1-GE3 replace the SIZ710DT-T1-GE3 in an existing power supply design without changing the gate drive or layout?
Replacing the SIZ710DT-T1-GE3 with the SIZ900DT-T1-GE3 requires caution despite similar 6-PowerPair™ packaging and 30V rating. The SIZ900DT-T1-GE3 has higher gate charge (45nC vs. 32nC), which increases switching losses and may over-stress weaker gate drivers. Additionally, Rds(on) is slightly higher (7.2mΩ vs. 6.5mΩ), affecting thermal performance. You must verify that the existing gate driver can source/sink >1A peak and that the dead time in your control circuit is sufficient to prevent cross-conduction. Thermal pad layout and via count should also be rechecked due to different power dissipation profiles.
What layout best practices should be followed when integrating the SIZ900DT-T1-GE3 into a high-frequency DC-DC converter to minimize parasitic inductance and oscillation?
To minimize parasitic inductance and prevent oscillation with the SIZ900DT-T1-GE3 in high-frequency DC-DC designs, keep gate drive loops as short as possible (<5mm) using Kelvin-source connection if available. Place a 100nF ceramic bypass capacitor directly between each source pin and its respective gate driver supply, and use a solid ground plane. Route high-current paths (drain to source) with wide, short traces to reduce loop inductance. The shared source in the half-bridge configuration is especially sensitive—avoid daisy-chaining ground returns. Consider adding a 4.7Ω gate resistor in series to dampen ringing, particularly if using fast drivers like MIC5018.
What are the reliability implications of using the obsolete SIZ900DT-T1-GE3 in a new industrial design with a 10-year product lifecycle?
Using the obsolete SIZ900DT-T1-GE3 in a new industrial design carries significant long-term reliability and supply chain risks. While the device itself has robust specs (150°C TJ, MSL1, 100W pulse rating), its obsolescence means future production runs may face part shortages, forcing last-time buys or redesigns. For a 10-year lifecycle, this increases risk of unscheduled downtime or NRE costs. Consider form-fit-function replacements like STL66DN3LLH5, which offers similar 30V/20A specs with ongoing availability. If proceeding with SIZ900DT-T1-GE3, secure extended inventory with traceable date codes and qualify a second-source alternative early in the design phase.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SIZ900DT-T1-GE3 CAD Models
Vishay Siliconix SIZ900DT-T1-GE3 PCB symbols & footprints
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